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 1 www.fairchildsemi.com ?2005 Fairchild Semiconductor Cor poration FFPF10UP30ST Rev . A FFPF10UP30ST 10 A, 300 V, Ultrafast Diode FFPF10UP30ST ? Ultrafast Recovery trr = 45 ns (@ IF = 10 A) ? Max Forward Voltage, VF = 1.4 V (@ T C = 25°C) ? Reverse Voltage, VRRM = 300 V ? Avalanche Energy Rated ? RoHS Compliant Applications ? General Purpose ? Switching Mode Power Supply ? Free-Wheeling Diode for Motor Application ? Power Switching Circuits Absolute Maximum Ratings (per diode) Ta = 25°C unless otherwise noted Thermal Characteristics Ta = 25°C unless otherwise noted Symbol Parameter Value Unit VRRM Peak Repetitive Reverse Voltage 300 V VRWM Working Peak Reverse Voltage 300 V VR DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current @ TC = 125 °C10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 100 A TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C Symbol Parameter Max Unit RθJC Maximum Thermal Resistance, Junction to Case 4.0 °C/W 1. Cathode 2. Anode 1 TO-220F 12 1. Cathode 2. Anode Features tm September 200 5 10 A, 300 V, Ultrafast Diode The FFPF10UP30S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. |